GH-SW640 InGaAs area image sensors are two-dimensional image sensors that have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for short wavelength infrared (SWIR, 900nm-1700nm) and extended wavelength infrared (Vis-SWIR, 400nm-1700nm) regions.

The detector can be supplied in two types of metallic package:

Nitrogen & Vacuum, which both include a Thermo-Electric Cooler (TEC)

It is well-adapted to a large range of applications, such as surveillance, hyperspectral imaging, remote sensing, machine vision, industrial sorting, process inspection, and science.

TECHNICAL INFORMATION OF GH-SW640 

Key Features GH-SW640

Sensor Type InGaAs PIN-Photodiode

Format 640x512

Pixel Pitch 15μm

Spectral Response 0.9µm-1.7µm / 0.4um-1.7µm (optional)

Integration Type Snapshot

Readout Modes ITR, IWR, CDS

Exposure Time 2μs to full frame

Maximum Full Frame Rate 300 Hz

Maximum Pixel Rate 20MHz

Output Signal Swing ≤2V

Temperature Sensor Output Yes

Quantum Efficiency(QE) >70% (1.0um-1.6um）

Noise with ROIC 35e- @HG

Dark Current 30fA@0.1V&18℃

Array Operability > 99.5% (Minimum)

Non Uniformity without Correction